Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

Abstract

The properties of semiconductors are highly dependent on their crystalline structure. The formation of metastable polytypes under the action of external mechanical stresses leads to a change in the properties of the initial materials. In particular, for hexagonal silicon polytypes, an improvement in light-emitting properties can be observed compared to diamond-like silicon. In this work, the photoluminescent properties of silicon samples with the 9R-Si hexagonal phase synthesized by implanting Kr+ ions into the SiO2/Si system have been studied. The effect of post-implantation annealing conditions on the evolution of PL peaks in the spectral range around 1240 nm is analyzed. The contribution to the observed PL peaks of the light-emitting 9R-Si phase and W, S1, S2 defects associated with radiation damage in silicon substrates is discussed. It is shown that the formation of the 9R-Si phase and associated PL are affected by mechanical stresses formed in the SiO2 film upon irradiation.