Abstract
Trap level spectroscopic studies were carried out on γ-irradiated Tb (1 mole%) doped SrBPO 5 were carried out using photoluminescence (PL), thermally stimulated luminescence (TSL) and electron paramagnetic resonance (EPR) techniques. The incorporation of Tb in the 3+ oxidation state was ascertained from PL studies. Life time for Tb 3+ emission corresponding to the intense transition 5D 4 → 7F 5 at 543 nm was determined. The spectral characteristics of the TSL glows have shown that Tb 3+ ions act as the emission center for the glow peak at 475 K. The trap parameters of the glow peak were determined. EPR investigations at room temperature/77 K revealed the stabilization of three boron oxygen hole trapped centers (BOHC's) and oxygen centered radicals such as O − and O 2 − and trapped electrons in room temperature γ-irradiated samples. TSL glow peak at 475 K was found to be associated with recombination of electron released from trapped electron center and the BOHC 2 center.
Published Version
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