Abstract
AlGaInP/GaInP quantum well intermixing phenomena induced by Zn impurity diffusion at 540 °C were studied using room-temperature photoluminescence (PL) spectroscopy. As the diffusion time increased from 40 to 120 min, PL blue shift taken on the AlGaInP/GaInP quantum well regions increased from 36.3 to 171.6 meV. Moreover, when the diffusion time was equal to or above 60 min, it was observed firstly that a PL red shift occurred with a PL blue shift on the samples. After detailed analysis, it was found that the red-shift PL spectra were measured on the Ga 0.51In 0.49P buffer layer of the samples, and the mechanism of the PL red shift and the PL blue shift were studied qualitatively.
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