Photoluminescence studies on InGaN/GaN multiple quantum wells with different degree of localization

Abstract

It has been found, by using photoluminescence (PL) studies, that both the localized states and nonradiative recombination centers in In0.06Ga0.94N/GaN multiple quantum wells (MQWs) can be greatly suppressed by inserting a monolayer of AlN before the growth of each well layer. While inserting a monolayer of AlN before each well layer does not have any effect on the growth rate or on the indium content of MQWs, it does improve room-temperature PL intensity of the In0.06Ga0.94N/GaN MQWs. The physics behind the suppression of localized states and nonradiative recombination centers is discussed.