Abstract
Recombination radiation due to an exciton bound to neutral donors and neutral acceptors in high purity vapor phase epitaxial GaAs is investigated using high resolution photoluminescence spectroscopy at liquid helium temperatures. It is found that those samples which show the presence of germanium acceptors also exhibit a strong residual donor referred to in the literature as X 3. Samples containing carbon acceptors however, do not show the presence of X 3. In the past X 3 has been identified by some groups as due to carbon on the gallium site. The work presented here sugests that the X 3 donor is associated with germanium. This identification of the X 3 donor is in agreement with a recent assignment based on the far infrared study of neutron transmuted GaAs.
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