Abstract
Electron transfer process from neutral donor to neutral acceptor in germanium has been observed at liquid helium temperatures in the form of a slowly decaying photoconductivity tail after the flash of the band-gap light. The decay time constant is governed by the leakage flux of room temperature black body radiations upon the sample. Through analyzing the d.c. conductivity as well as Hall data, microwave cyclotron resonance and far-infrared magneto-absorption, the carrier capture cross sections by neutral impurities are determined as a function of temperature: 8×10 -17 cm -2 for the capture of electrons at neutral acceptors and 5×10 -16 cm -2 for that of holes at neutral donors, at 4.2 K with a dependence of T -2 .
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