Abstract
Photoluminescence spectra are used to investigate inadvertent impurities in Si molecular beam epitaxy (MBE) layers. The spectra show free exciton and condensed exciton (electron-hole drop) features which are indicative of good crystalline quality. Electrically active shallow impurities are identified from near-gap bound exciton features. In one layer radiative recombination at dislocations is dominant. For the first time using an optical technique carbon is shown to be a persistent impurity in Si MBE material. This technique provides a test for inadvertent carbon incorporation at levels which may otherwise be difficult to detect in thin epitaxial layers.
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More From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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