Abstract
Si-doped AlN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates. Deep ultraviolet picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the optical transitions in the grown epilayers. The donor bound exciton (or I2) transition was found to be the dominant recombination line in Si-doped AlN epilayers at 10 K and its emission intensity decreases with increasing Si dopant concentration. Doping-induced PL emission linewidth broadening and band-gap renormalization effects have also been observed. Time-resolved PL studies revealed a linear decrease of PL decay lifetime with increasing Si dopant concentration, which was believed to be a direct consequence of the doping-enhanced nonradiative recombination rates.
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