Abstract
Deep ultraviolet photoluminescence spectroscopy was employed to study the impurity transitions in Mg-doped AlGaN alloys. A group of deep level impurity transitions was observed in Mg-doped AlxGa1−xN alloys, which was identified to have the same origin as the previously reported blue line at 2.8eV in Mg-doped GaN and was assigned to the recombination of electrons bound to the nitrogen vacancy with three positive charges (VN3+) and neutral Mg acceptors. Based on the measured activation energies of the Mg acceptors in AlGaN and the observed impurity emission peaks, the VN3+ energy levels in AlxGa1−xN have been deduced for the entire alloy range. It is demonstrated that the presence of high density of VN3+ deep donors translates to the reduced p-type conductivity in AlGaN alloys due to their ability for capturing free holes.
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