Abstract
AbstractGallium nitride layers were grown epitaxially on sapphire substrates in a LP‐MOCVD reactor using trimethylgallium and ammonia. GaN films were also obtained by nitridation, exposing GaAs substrates to ammonia in the same reactor under similar conditions. The temperature ranged between 750 °C and 900 °C, while the pressure was adjusted between 75 and 585 Torr. Photoluminescence measurements were made on the samples using a 325 nm He–Cd laser; near band edge emission and subbandgap luminescence were observed. The luminescence color of the sapphire grown layers went from orange to yellow‐green, while it ranged from yellow to blue‐violet in the nitridated samples. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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