Abstract
Indium nitride (InN) thin films were deposited on anisotropic silicon [Si(110)] and photoelectrochemical etched silicon [Psi(110)] substrates by reactive radio-frequency sputtering. All deposited films showed wurtzite nanocrystalline InN films with a (101) preferred growth orientation. The optical properties of the nitrogen-rich InN thin films were investigated under various deposition gas concentrations. Strong photoluminescence was observed in the 1.8 eV–1.98 eV energy range for nanocrystalline InN grown on Si(110) at room temperature. The lower energy emission peak was achieved for InN grown on PSi(110) samples.
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