Abstract
Nitrogen rich indium nitride (InN) thin films were deposited on anisotropic silicon [Si(110)] and 6H-silicon carbide (6H-SiC) substrates by reactive radio frequency sputtering technique. The surface quality of the InN films on Si(110) substrate was compared to that deposited on 6H-SiC substrate. Both deposited films showed wurtzite nanocrystalline InN films with a (101) preferred growth orientation. One Raman active optical phonon of E2(high) and two Raman and infrared active modes of A1(LO) and E1(TO) of the wurtzite InN thin film were clearly observed for both samples. Morphological characteristics showed higher surface quality for InN grown on Si(110) compared to that on SiC substrate. Owing to the large lattice mismatch, it was found that the crystallinity of InN films grown on 6H-SiC substrate degraded as compared to that grown on Si(110).
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