Abstract
ZnSe nanowires were synthesized by using the thermal evaporation of ZnSe powder, and the effects of Pt functionalization and thermal annealing on the photoluminescence (PL) properties of the nanostructures were examined. PL spectroscopy showed that the intensity of the near-band-edge (NBE) emission of the ZnSe nanowires was enhanced considerably by Pt coating and annealing in a H2 atmosphere. The intensity ratio of NBE emission to deep-level emission, INBE/IDL, of Pt-coated ZnSe nanowires after annealing in a H2 atmosphere was ∼11 times higher than that of the pristine (unannealed, uncoated) ZnSe nanowires. The increase in INBE/IDL might be due to a combination of carrier transfer from defect levels to the Fermi level of the Pt nanoparticles, surface plasmon resonance in the Pt nanoparticles and hydrogen passivation of deep-level defects.
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