Abstract
Au-functionalized ZnSe nanorods were synthesized by the thermal evaporation of ZnSe powder followed by Au sputter-deposition and thermal annealing. Photoluminescence (PL) showed that the intensity of near-band edge (NBE) emission of ZnSe nanorods was enhanced remarkably by Au-coating and annealing in a H2 atmosphere. The intensity ratio of NBE emission to the deep level emission, INBE/IDL of Au-coated ZnSe nanorods after annealing in a H2 atmosphere was ∼68 times higher than that of the pristine (unannealed, uncoated) ZnSe nanorods. The increase in INBE/IDL might be due to a combination of carrier transfer from the defect level to the Fermi level of Au nanoparticles, surface plasmon resonance in Au nanoparticles and hydrogen passivated deep level defects.
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