Abstract
A Ba 2+ co-doped Sr 2 Ga 2 SiO 7 :Eu phosphor was synthesized by solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a broad emission with a maximum peak intensity at 520 nm (λ ex = 405 nm). The phosphor could be used to construct a white light-emitting diodes (LEDs). LEDs were fabricated through an integration of an InGaN blue chip (λ em = 405 nm) and a blend of two phosphors (Ba 2+ co-doped Sr 2 Ga 2 SiO 7 :Eu + Ba 2+ co-doped Sr 3 SiΟ 5 :Eu) in a single package. By employing two phosphors, the white LEDs showed CIE chromaticity with values of x = 0.35 and y = 0.41 and a color temperature of 5040 K.
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