Abstract
Mg3.5Ge1.25O6:Mn4+ was synthesized by a solid-state reaction and its photoluminescence characteristics were investigated. The synthesized phosphor showed a narrow emission band between 600 and 700nm with two clear peaks at 632 and 660nm and two obscure peaks at 626 and 653nm due to the 2E→4A2 transition of Mn4+ (λex=405nm). Red light-emitting diodes (LEDs) were fabricated through the integration of an InGaN UV chip (λem=405nm) and Mg3.5Ge1.25O6:Mn4+ phosphor in a single package. Red LEDs showed CIE chromaticity with values of x=0.32 and y=0.10 and the color temperature of 4900K.
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