Abstract
A comparative study is given of the photoluminescence properties between undoped (100) InP homoepitaxial MBE and LPE films and bulk crystals. All of the samples show two peaks; one is a near band-edge emission at 1.41 eV with a small shoulder and the other is at about 1.13 eV. It is shown that the MBE films have a near band-edge emission with intensity comparable with the LPE films, and exhibit a smaller amount of deep-level emission than the LPE films and bulk crystals.
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