Abstract
Room temperature photoluminescence (PL) properties of the Tb3+ ion implanted nonstoichiometric silicon nitride (Tb3+:SiNx) and silicon dioxide (Tb3+:SiOx) were studied. The films were deposited by plasma-enhanced chemical vapor deposition and then annealed at different temperatures for 1h in flowing N2 before or after the implantation. Results show that there are four intense PL peaks due to the intra-4f transitions of Tb3+ in the wavelength from 470to625nm for both kinds of films. Moreover, after postannealing at 1000°C, the integrated PL intensity of Tb3+:SiNx is much higher than that of Tb3+:SiOx. The energy transfer from the defect related energy levels to the Tb3+ ions will enhance the D45→Fk7 (k=3–6) luminescence of Tb3+ ions.
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