Abstract
Room-temperature photoluminescence (PL) properties of the Tb3+ion implanted non-stoichiometric silicon nitride (SiNx:Tb3+) and silicon dioxide (SiOx:Tb3+) were studied. The films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and then annealed at different temperatures for 1 hour in flowing N2after the Tb ion-implantation. Results show that there are four intense PL peaks due to the intra-4ftransitions of Tb3+in the wavelength from 470 nm to 625 nm for both kinds of films. Moreover, the PL intensity of Tb3+:SiNxis much higher than that of Tb3+:SiOx. The less oxygen content of the SiNxfilm and, more importantly, the faster recombination lifetime of Tb3+ion in SiNxfilm are the main reasons. This result shows that SiNx:Tb3+can be used for silicon-based light emission materials.
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