PHOTOLUMINESCENCE OF Si-RICH SiNx FILMS DEPOSITED BY LPCVD UNDER DIFFERENT CONDITIONS

Abstract

The silicon-rich silicon-nitride thin films deposited by low pressure chemical vapor deposition at 800° C ~950° C , using dichlorosilane and ammonia as precursors, have the mosaic structure of crystallized silicon nanoclusters embedded in amorphous silicon nitride matrix, showing visible photoluminescence (PL) emission at room temperature with one to five separate peaks. The microstructures of the films change with the deposition temperatures and flux ratios of dichlorosilane to ammonia, which causes changes in the PL spectra of the films. In this paper, we report the experimental results and try to explain it with our gap states model.