Abstract
Modulation-doped GaAs quantum wires are grown on the surfaces with giant steps which are naturally formed on vicinal GaAs (110) substrates by molecular beam epitaxy (MBE). It is found that photoluminescence (PL) peaks shift to lower energy with increasing doping level and to higher energy with increasing excitation intensity. These results indicate that the GaAs quantum wires are successfully modulation-doped.
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