Abstract
The blue band (BB) in low temperature photoluminescence ofMg-doped GaN films with different Mg concentrations is investigated.The BB peak of as-grown samples with higher Mg concentration centres atlower energy. A shift of the BB peak energy is observed after annealingin N2 at different temperatures. Meanwhile, the differencebetween the BB peak energies diminishes for raised annealingtemperature, and the BB peaks for different samples converge to 2.92 eVafter annealing at 850°C. These experimental results can be accountedfor by a model based on compensation effect. The shift of BB linesprovides a useful criterion for the optimum annealing temperature ofthe Mg-doped GaN material, and the value is taken to be 850°C in ourcase.
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