N + - GaN formed by Si implantation into p-GaN

Abstract

Si + 28 implantation into Mg-doped GaN, followed by thermal annealing in N2 was performed to achieve n+-GaN layers. Multiple implantation was used to form a uniform Si implanted region. It was found that the carrier concentration of the films changed from 3×1017 cm−3 (p-type) to 5×1019 cm−3 (n-type) when the samples were annealed in N2 ambient at 1000 °C. The activation efficiency of Si in Mg-doped GaN was as high as 27%. In addition, planar GaN n+–p junctions formed by Si-implanted GaN:Mg were also achieved.