Abstract
An investigation was made into the epitaxial growth and photoluminescence (PL) of InAs x Sb y P 1− x− y pn junctions grown in liquid-phase epitaxy. Details of the growth conditions and X-ray analysis are given, together with PL results measured over the temperature range 78–295 K. Four radiative transitions were observed at 78 K, three of these were correlated with direct nearband-edge recombination, whilst a lattice defect was thought to be responsible for the weaker emission band at longer wavelengths. Increasing the sample temperature had the effect of shifting the main photoluminescence peak towards higher energies and quenching the PL emission arising from acceptors. This behaviour was interpreted on the basis of an increase in ionisation of donors and acceptor impurities leading to increased band filling.
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