Abstract

Abstract The effect of excitation intensity on the photoluminescence spectra of pseudomorphic InGaAs/GaAs single quantum wells grown by molecular beam epitaxy is examined. Even at moderate excitation intensities, saturation of the exciton population and band-filling is observed. The band-filling leads to luminescence involving higher sub-bands, and the energies obtained are used to estimate the band offsets at the quantum well interfaces.

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