Abstract
A variety of SiGe quantum well (QW) samples were grown by solid-source molecular beam epitaxy (MBE) to study the influence of growth temperature TG and QW width Lz on the photoluminescence (PL) properties. For all growth temperatures investigated (350 °C≤TG≤750 °C) we found intense, well-resolved PL signals from the SiGe QWs. The PL intensity increases with TG, and the stability against measurement temperature becomes better. A formerly reported PL band below the SiGe band edge is either completely absent, or very weak in the 4.2 K spectra of our samples. Thus, the defects or complexes responsible for this signal are obviously not inherent properties of MBE growth.
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