Abstract
Effects of modulation doping on the radiative recombination in Si thin films and SiGe quantum wells (QWs) grown by molecular beam epitaxy are studied in details by photoluminescence (PL) spectroscopy. It is shown that the formation of a two-dimensional hole gas, either in the SiGe QWs or in the doping-induced notch potential in Si thin films, manifests itself in the appearance of characteristic broad luminescence bands. The PL properties are found to be strongly dependent on structure parameters as well as on the experimental conditions, such as photo-excitation intensity and measurement temperature. In the modulation doped SiGe QWs the recombination process is shown to be strongly affected by correlation phenomena, such as Fermi edge singularity.
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