Abstract
Effects of modulation doping on the radiative recombination in Si thin films and SiGe quantum wells (QWs) grown by molecular beam epitaxy are studied in details by photoluminescence (PL) spectroscopy. It is shown that the formation of a two-dimensional hole gas, either in the SiGe QWs or in the doping-induced notch potential in Si thin films, manifests itself in the appearance of characteristic broad luminescence bands. The PL properties are found to be strongly dependent on structure parameters as well as on the experimental conditions, such as photo-excitation intensity and measurement temperature. In the modulation doped SiGe QWs the recombination process is shown to be strongly affected by correlation phenomena, such as Fermi edge singularity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
