Abstract
The influence of chemical etching on the emission properties of undoped CdSnP2 crystals has been studied. The appropriate treatment gives rise to integral strengthening of photoluminescence and redistribution of emissions in such a manner that the longest wavelength band disappears and the exciton line flames up. The shortest wavelength line at 1.243 eV with the 2kT half-width has been observed successfully for the first time. The doublet structure observed near the fundamental optical edge was attributed to the free exciton and bound-to-shallow level state in CdSnP2.
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