Abstract
Photoluminescence lifetime measurements confirm that the intense lines seen in Be-doped Si result from exciton recombination at an isoelectronic binding centre, and in addition reveal that other weaker lines are due to a different isoelectronic binding centre. We suggest that these two binding centres may be related in the same way as are the Group III acceptors and the X-acceptors in Si. A number of excited states of the main isoelectronic bound exciton have been observed in absorption, excitation and luminescence spectra, and the density of the binding centres has been determined.
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