Abstract
Photoluminescence (PL) of GaAs0.97Bi0.03 alloy was measured over a wide range of temperatures and excitation powers. Room temperature PL with peak wavelength of 1038 nm and full-width-half-maximum of 75 meV was observed which is relatively low for this composition. The improved quality is believed due to reduced alloy fluctuations by growing at relatively high temperature. The temperature dependence of PL peak energy indicated significant exciton localization at low temperatures. Furthermore, the band gap temperature dependence was found to be weaker than GaAs. An analysis of dominant carrier recombination mechanism(s) was also carried out indicating that radiative recombination is dominant at low temperature.
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