Abstract
Photoluminescence of NInGaAsP multiepilayers has been observed. The wafers used have the structure of NInGaAsP active layer (Eg∼0.95eV) /NInGaAsP confinement layer (Eg∼1.2eV) /NInP substrate. Several radiation emission peaks can be seen in the photoluminescence spectra, which are identified as band to band recombination and recombination between electrons in the conduction band and holes in the split-off valence band in both the active layer and the confinement layer respectively. The fact that all layers used are N-type material excludes any uncertainties resulting from electron leakage and provides new evidence that hole leakage occurs in present structures and is enhanced by the split-off valence band.
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