Abstract
We present excitation spectra and photoluminescence (PL) spectra as a function of temperature for films of hydrogenated amorphous silicon (a-Si:H) prepared by sputtering in argon with a partial pressure of hydrogen. For samples prepared at 10 −4–10 −3 Torr of H, a single PL peak near 1.3eV is observed. At higher partial pressures of H an additional peak near 0.95eV appears. Using PL spectra, photoconductivity-derived absorption and detailed balance arguments, we present a model for radiative recombination at 1.3eV, not strongly Stokes shifted, based on a proposed model of the gap density of states (GDOS). For PL(1.3) and PL(0.95) excitation spectra are presented and compared with absorption spectra. Our model of the GDOS is then expanded to include samples exhibiting PL(0.95). PL(1.3) and PL(0.95) are presented as a function of temperature and examined in terms of present models of non-radiative recombination.
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