Abstract
Doping of Ho into AgGaS 2 has been carried out by the thermal diffusion of Ho element into the undoped crystal. Sharp photoluminescence (PL) lines related to the 5S 2→ 5I 8 and 5F 3→ 5I 7 transitions in the Ho 3+ ion are observed in the energy regions 2.23–2.28 and 1.85–1.93 eV, respectively. Temperature dependence and excitation wavelength dependence of the PL indicate the existence of at least four types of Ho-related luminescence centers. Moreover, it is found that PL lines from different Ho-related luminescence centers exhibit different excitation and recombination mechanisms.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
