Abstract
Photoluminescence spectroscopy in high magnetic fields has proved to be an informative tool for investigating the behaviour of two dimensional electrons in modulation-doped, n-type GaAs/ Al x Ga 1- x As multiple quantum well (MQW) heterostructures. Two kinds of field dependent excitations are observed: One corresponds to transitions from Landau levels in the conduction band to Landau levels in the valence band (band-to-band transitions with Δ l = 0); the second involves conduction band to carbon acceptor (CB → A° and CB → A° ∗) Landau transitions. At low temperatures, anomalies are observed in the l = 0 and l = 1 interband transitions which appear to be related to Fermi level-Landau level crossings.
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