Abstract
InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
