Photoluminescence from GaAs-AlxGa1−xAs quantum wells with nonuniform p-type doping profiles

Abstract

GaAs quantum wells with localized Be doping have been produced from the GaAs-AlxGa1−xAs system using molecular beam epitaxy. Structures with the Be doping concentrated at the heterostructure interface and at the well center have been examined at low temperatures via their photoluminescence and excitation spectra. The energies of the emission peaks due to the recombination of n=1 confined electrons with neutral Be acceptors are dependent upon the position of the Be0 centers in the GaAs quantum well and are consistent with expectations from the theoretical work of Bastard. At 5 K these structures exhibit substantial luminescence attributed to bound excitons on the low-energy side of the n=1 free heavy-hole exciton emission. As the sample temperature is increased; this luminescence decreases and significant changes occur in the confined electron-Be emission spectra.