Abstract
High-quality GaNAs∕GaAs quantum wells with high substitutional N concentrations, grown by molecular-beam epitaxy, are demonstrated using a reduced growth rate in a range of 0.125–1μm∕h. No phase separation is observed and the GaNAs well thickness is limited by the critical thickness. Strong room-temperature photoluminescence with a record long wavelength of 1.44μm is obtained from an 18-nm-thick GaN0.06As0.94∕GaAs quantum well.
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