Abstract
Photoluminescence excitation (PLE) spectroscopy at liquid-helium temperature is used to study six ZnSe:N epilayers grown by molecular beam epitaxy. These samples represent nitrogen-doping levels ranging from less than 1017 to 3×1019 cm−3. The luminescence emission bands from the heavily doped samples exhibit peak energies varying from 2.45 to 2.61 eV. The energy range over which the PLE signal intensity decays and the energy difference between the onset of this decay and the PL peak energy are essentially the same for all the heavy-doped samples. A model is proposed to explain the PL and PLE results for a semiconductor in the presence of potential fluctuations.
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