Abstract
This paper reports the feasibility of synthesis and characterization of nano-porous silicon (NPS) powder and (Nickel/nano-porous silicon, Ni/NPS) nano-composite prepared using dual techniques (alkaline chemical etching process and ultra-sonication technique). The structural and the optical properties of the fabricated structures are inspected using X-ray Diffraction, Fourier Transform Infrared Spectrophotometer, Raman Spec-troscopy, and Fluorescence Spectrophotometer Photoluminescence. All the results have agreed that NPS is one of the most suitable materials used as active material in the LED fabrication; by changing the main factors in the preparation process, so the different physical and chemical properties are obtained. NPS produces two emission regions that correspond to orange-red and dark red; on the other hand, (Ni/NPS) produce the yellow emission. So, the photoluminescence emission is controllable by adjusting the preparation conditions. The optical data recorded here are useful for the production of the nanoscale optical devices.
Highlights
During recent years, many materials have come to the attention of researchers, using as light emitting device (LED), due to the extensive commercial demand
This paper reports the feasibility of synthesis and characterization of nano-porous silicon (NPS) powder and (Nickel/nano-porous silicon, Ni/NPS) nano-composite prepared using dual techniques
The optical properties of NPS and (Ni/NPS) nanocomposites are investigated in this study
Summary
Many materials have come to the attention of researchers, using as light emitting device (LED), due to the extensive commercial demand. The most popular composites are InGaN, GaAs and AlGaN, that ascribed to the satisfactory emission intensity and mature fabrication techniques. It is a challenge against these materials for the incompatibility with Si-based microelectronics process and the expensive cost for commercial demand. No other materials achieve perfect commercial applications as Si. But, Si is hardly photoluminescence emission with respect to other materials, such as InGaAs, as a result of its indirect band gap [1]. The finding of photoluminescence in porous silicon has sparked the hope for silicon as a material for optoelectronic applications. Photoluminescence from nanostructured silicon could be demonstrated from porous silicon, and silicon nanocrystals formed in a SiO2 matrix by implantation of Si ions and subsequent annealing and isolated silicon nanoparticles [2]
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