Abstract
In this paper, the polarizing properties for CdS nanowire arrays were explored for their potential use in the design of nanowire based polarizers and optical switches. These free standing cadmium sulphide (CdS) nanowires were grown in anodized aluminum oxide (AAO) template via dc electrodeposition. Raman and photoluminescence (PL) measurements were investigated for parallel and perpendicular polarization with two orientations of the sample having light propagating parallel to the nanowire axis in one orientation and light propagating perpendicular to the nanowire axis in other orientation. Polarization-sensitive measurements show strong polarization anisotropy in the photoluminescence (PL) intensity measurements observed in parallel and perpendicular orientation to the long axis of a nanowire. The measured PL ratio, ρ, for parallel to perpendicular orientation was around 0.80- 0.85 which shows strong polarization anisotropy for the grown CdS nanowires. Strong peaks of A1 (TO) at 235 cm-1, E2 mode at 255 cm-1 along with 1 LO (longitudinal optical) at 303 cm-1, 2 LO peak at 604 cm-1 of the CdS nanowires were seen with different polarizations for Raman spectral studies. These polarization studies show that these dc electrodeposited grown CdS nanowire arrays are well suited for uses in polarization-based nanoscale devices such as in optical switches, and high performance photodetectors.
Highlights
With the advent and rapid development of nanotechnology, semiconductor nanowires (NWs) have become essential components for future “nano-devices”
This paper discusses about the most economical way is to grow vertically aligned nanowires in a nanoporous template through dc electrodeposition by overcoming the bottlenecks of barrier layer removal during the growth of cadmium sulphide (CdS) nanowires which can sometimes lead to poor crystallinity of grown CdS nanowires
CdS nanowires were self assembled in an anodized aluminum sheet metal of thickness of 500 μm
Summary
With the advent and rapid development of nanotechnology, semiconductor nanowires (NWs) have become essential components for future “nano-devices”. Poduri & Stroscio, 2015; Samuelson et al, 2004), quantum dots in nanowires for LEDs (light emitting diodes) (Gudiksen, Wang, & Lieber, 2002), etc. These interesting properties of semiconductor nanowire devices are being employed in both scientific and industrial applications. The polarization anisotropy feature employed in high performance nanowire polarizers can be explained in terms of the large dielectric difference between these freestanding nanowires and the surrounding environment This property of polarization anisotropy is employed here to demonstrate its potential use in the application of high performance polarization-based sensitive nanoscale based optical switches, and polarizers (Wang, Gudiksen, Duan, Cui, & Lieber, 2001)
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