Abstract
Yellow-emitting Sr3-xEuxSiO5 (x = 0∼0.1) phosphors were synthesized by solid-state reaction method and Pechini process, and the phase, morphology, photoluminescence (PL) properties were investigated. In solid-state method, Sr3SiO5 was obtained with a small amount of Sr2SiO4, but a single phase Eu-doped Sr3SiO5 was realized at 1600°C in Pechini process. The phosphor prepared by Pechini process had a rather round shape with a smooth surface and a smaller size distribution. The obtained Sr3-xEuxSiO5 phosphors exhibited a strong emission at 581 nm under the excitation of λexc = 460 nm. The highest PL intensity was observed in Sr3-xEuxSiO5 (x = 0.05) prepared by Pechini process at 1600°C. The obtained PL properties were discussed in terms of phase purity, particle size and shape, surface roughness, and effect of concentration quenching. In addition, the temperature dependence of the PL intensity and the emission characteristics of white light-emitting InGaN-based Sr3-xEuxSiO5 LED were compared with those of commercial YAG:Ce3+ phosphor.
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