Abstract
Photoluminescence (PL) properties at room temperature of disordered Ba0.50Sr0.50(Ti0.80Sn0.20)O3 (BST:Sn) thin films were obtained by the polymeric precursor method. X-ray diffraction data and corresponding PL properties have been measured using the 488nm line of an argon ion laser. The PL spectra of the film annealed at 350°C for 21h are stronger than those of the film annealed at 350°C for 28h, indicating a disorganized structure. The energy band gaps of the crystalline and amorphous BST:Sn thin films were 3.35 and 2.25eV, respectively. The doped BST thin films also tend to a cubic structure, resulting from TiO6 deformations.
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