Abstract
Suprasil glass (amorphous SiO 2) has been implanted with 2.9 MeV Er ions at fluences of 3.4 × 10 15and 3.4 × 10 16ions/cm 2. Photoluminescence spectra of implanted samples show a clear luminescent transition around λ = 1.54 μm, corresponding to an intra-4f transition of Er 3+. Fluorescence decay times are in the range 1–8 ms, depending on implantation fluence and annealing treatment. UV absorption and IR reflection spectroscopy are employed to characterize beam-induced defects in the silica network. The results indicate that defects in the silica network play an important role in the energy transfer processes in the Er: silica system.
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