Abstract
Quantum dots of 50 nm diameter fabricated from strained layer Si/Si 1-x Ge x (x = 0.1-0.3) superlattices were studied by Raman and photoluminescence spectroscopy. It was found that an elastic residual strain of the order of about 50% of the strength of the corresponding pseudomorphic strain exists in the dry etched quantum dots which show an improved optical efficiency of over two orders of magnitude over the as-grown superlattices. This enhanced light emission may be due to a combined effect of lateral quantum confinement and a possible indirect-direct bandgap transition caused by lattice distortion due to process-induced change of strain field in the dots.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Selected Topics in Group IV and II–VI Semiconductors
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
