Abstract
Quantum dots of 50 nm diameter fabricated from strained layer Si Si 1 − x Ge x (x = 0.1–0.3) superlattices were studied by Raman and photoluminescence spectroscopy. It was found that an elastic residual strain of the order of about 50% of the strength of the corresponding pseudomorphic strain exists in the dry etched quantum dots which show an improved optical efficiency of over two orders of magnitude over the as-grown superlattices. This enhanced light emission may be due to a combined effect of lateral quantum confinement and a possible indirect-direct bandgap transition caused by lattice distortion due to process-induced change of strain field in the dots.
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