Abstract
AbstractTemperature and compositional studies of photoluminescence and optical absorption edge spectra of γ1‐(GaxIn1–x)2Se3 mixed crystals with x = 0.1–0.4 are performed. Exciton and impurity‐related photoluminescence bands are revealed at low temperatures and Urbach shape of the absorption edge is observed in the temperature range 77–300 K. Temperature and compositional dependences of the photoluminescence band spectral positions and halfwidths as well as optical pseudogap and absorption edge energy width are investigated. Mechanisms of radiative recombination and optical absorption as well as crystal lattice disordering processes in γ1‐(GaxIn1–x)2Se3 solid solutions are studied. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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