Abstract
Three space-grown and two ground-grown Te doped GaSb samples are studied using Hall effect and photoluminescence (PL) spectroscopy to evaluate the degree of Te segregation in the crystals. A p–n conductivity type transition is observed in the ground-grown samples reflecting Te segregation towards the tail end of the samples while only p type conductivity is measured in the space samples. PL data indicates radial and axial Te segregation in the processed samples. Fluctuations in hole and hence Te concentrations in the space samples are attributed to G-jitters.
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