Abstract
The photoluminescence and electroreflectance of GeSi strained layer superlattices were investigated in detail for several superlattice structures. It was found that superlattice samples of Ge n Si 3 n ( n = 4, 5 and 6) showed strong signals typical of semiconductors with a direct bandgap. Pseudopotential band calculations taking account of the perpendicular lattice strain dependence suggested the possibility of a direct bandgap even for GeSi superlattices on Si(001). The experimental results and theoretical considerations together demonstrated the possibility of a direct bandgap in the Ge n Si 3 n samples.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
