Abstract
The photoluminescence and electroreflectance of GeSi strained layer superlattices were investigated in detail for several superlattice structures. It was found that superlattice samples of Ge n Si 3 n ( n = 4, 5 and 6) showed strong signals typical of semiconductors with a direct bandgap. Pseudopotential band calculations taking account of the perpendicular lattice strain dependence suggested the possibility of a direct bandgap even for GeSi superlattices on Si(001). The experimental results and theoretical considerations together demonstrated the possibility of a direct bandgap in the Ge n Si 3 n samples.
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