Abstract
Silicon-rich silicon nitride (SRSN) films were prepared on p-type silicon substrates using plasma-enhanced chemical vapor deposition (PECVD). Small size (∼3nm) amorphous silicon quantum dots (a-Si QDs) were obtained after 1100°C annealing. Two different excitation sources, namely 325nm and 532nm lasers, were introduced to investigate the photoluminescence (PL) properties. The PL bands pumped by 325nm laser at ∼2.90eV and ∼1.80eV were contributed to the radiative centers from N dangling bonds (DBs), while the dominant PL bands at 2.10eV were ascribed to the instinct PL centers in the nitride matrix. However, PL emissions from band tail luminescence and quantum confined effect (QCE) in a-Si QDs were found under the excitation of 532nm laser. Light emitting diode (LED) with ITO/SiNx/p-Si/Al structure was fabricated. Intensely red light emission was observed by naked eyes at room temperature under forward 20V. Three different carrier transport mechanisms, namely Poole–Frenkel (P–F) tunneling, Fowler–Nordheim (F–N) tunneling and space charge limited current (SCLC), were found to fit different electric field regions. These results help to understand the PL mechanisms and to optimize the fabrication of a-Si QD LED.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
