Photolithographically fabricated low-loss asymmetric silicon slot waveguides

Abstract

We demonstrate low-loss asymmetric slot waveguides in silicon-on-insulator (SOI). 130 and 180 nm wide slots were fabricated with a 248 nm stepper, in 200 nm thick silicon. An asymmetric waveguide design is shown to expand the range in which the TE0 mode is guided and suppress the TE1 mode, while still maintaining a sharp concentration of electric field in the center of the slot. Optical propagation losses of 2 dB/cm or less are shown for asymmetric slot waveguides with 130 nm wide slots and 320 and 100 nm wide arms.